• 电信基础设施 相关应用

      Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
      DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
      DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50 38.8 40.5 28.0 Released Product
      DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10 34.0 32.0 20.0 Released Product
      DXG1CH08A-540EF* 780P2 758~821 540 49.0 58.0 18.0 Released Product
      DXG2CH22A-520EF* 780P2 2110~2170 510 49.0 58.2 14.8 Released Product
      DXG1CH27A-200EF* 780P2 2496~2690 220 45.0 50.0 14.1 Released Product
      DXG2CH27A-500EFV* 780P2 2500~2700 500 47.2 52.9 15.0 Released Product
      DXG1CH38A-200EF* 780P2 3300~3800 200 44.5 45.0 15.3 Released Product
      DXG2CH38A-450EFV* 780P2 3300~3800 450 47.5 46.0 14.5 Released Product
      DXG1CHD8A-F2EF* 780P2 3300~3800 450 48.5 42.0 14.0 Released Product
      DXG2CH50A-200EF* 780P2 4800~5000 200 44.5 44.2 14.2 Released Product
      DXG1PH22A-120N* DFN 7mm×10mm 1805~2170 120 42.3 55.5 14.6 Released Product
      DXG2PH27A-100N* DFN 7mm×6.5mm 2496~2690 90 41.3 56.5 15.9 Released Product
      DXG2PH36A-70N* DFN 7mm×6.5mm 3300~3800 60 39.3 53.5 15.4 Released Product
      DXG2PH36A-100N* DFN 7mm×6.5mm 3300~3800 100 41.3 54.3 15.8 Released Product
      DXG2PH50B-20N* DFN 4mm×4.5mm 4400~5000 20 47.8 37.0 16.0 In Development
      DXG2PH50A-90N* DFN 7mm×6.5mm 4800~5000 90 41.3 48.3 12.5 In Development
      DXG2PH60B-14N* DFN 4mm×4.5mm DC~6000 14 / 41.8 15.4 Released Product
      DXG1PH60P-40N DFN 7mm×6.5mm DC~6000 40 33.0 31.7 21.3 Released Product
      DXG1PH60P-60N* DFN 7mm×6.5mm DC~6000 60 40.0 55.0 19.5 Released Product
        共1页 20条

      DXG2CH50A-450EF*

      Brief description for the product

      DXG2CH50A-450EF*

      DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      4800

      MHz

      Frequency (Max.)

      5000

      MHz

      Supply Voltage (Typ.)

      52

      V

      Psat (Typ.)

      56.6

      dBm

      Power Gain @ 4900 MHz

      11.8

      dB

      Efficiency @ 4900 MHz

      42.6

      %

      ACPR @ 4900 MHz-34.0/-47.0dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2MH50A-50N*

      Brief description for the product

      DXG2MH50A-50N*

      DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      2496

      MHz

      Frequency (Max.)

      2690

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      49.9

      dBm

      Power Gain @ 2600 MHz

      15.9

      dB

      Efficiency @ 2600 MHz

      56.5

      %

      ACPR @ 2600 MHz-32.5dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG1PH60B-10N2*

      Brief description for the product

      DXG1PH60B-10N2*

      DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      DC

      MHz

      Frequency (Max.)

      6000

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      40.3

      dBm

      Power Gain @ 3500 MHz

      20.2

      dB

      Efficiency @ 3500 MHz

      32.3

      %


      Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


      DXG1CH08A-540EF*

      Brief description for the product

      DXG1CH08A-540EF*

      DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


      Operating Characteristics


      Parameter

      Value

      Unit

      Frequency (Min.)

      758

      MHz

      Frequency (Max.)

      821

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      57.0

      dBm

      Power Gain @ 780 MHz

      18.0

      dB

      Efficiency @ 780 MHz

      58.0

      %

      ACPR @ 780 MHz

      -28.0

      dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2CH22A-520EF*

      Brief description for the product

      DXG2CH22A-520EF*

      DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      2110

      MHz

      Frequency (Max.)

      2170

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      57.1

      dBm

      Power Gain @ 2140 MHz

      14.8

      dB

      Efficiency @ 2140 MHz

      58.2

      %

      ACPR @ 2140 MHz

      -34.6

      dBC


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG1CH27A-200EF*

      Brief description for the product

      DXG1CH27A-200EF*

      DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      2496

      MHz

      Frequency (Max.)

      2690

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      53.4

      dBm

      Power Gain @ 2595 MHz

      14.1

      dB

      Efficiency @ 2595 MHz

      50.0

      %

      ACPR @ 2595 MHz

      -30.0

      dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2CH27A-500EFV*

      Brief description for the product

      DXG2CH27A-500EFV*

      DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


      Operating Characteristics


      Parameter

      Value

      Unit

      Frequency (Min.)

      2500

      MHz

      Frequency (Max.)

      2700

      MHz

      Supply Voltage (Typ.)

      47

      V

      56.7Psat (Typ.)

      56.7

      dBm

      Power Gain @ 2593 MHz

      15.0

      dB

      Efficiency @ 2593 MHz

      52.9

      %

      ACPR @ 2593 MHz-32.9dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG1CH38A-200EF*

      Brief description for the product

      DXG1CH38A-200EF*

      DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.

       


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      3300

      MHz

      Frequency (Max.)

      3800

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      53.0

      dBm

      Power Gain @ 3500 MHz

      15.3

      dB

      Efficiency @ 3500 MHz

      45.0

      %

      ACPR @ 3500 MHz

      -30.0

      dBC

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2CH38A-450EFV*

      Brief description for the product

      DXG2CH38A-450EFV*

      DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      3300

      MHz

      Frequency (Max.)

      3800

      MHz

      Supply Voltage (Typ.)

      50

      V

      Psat (Typ.)

      56.7

      dBm

      Power Gain @ 3500 MHz

      14.7

      dB

      Efficiency @ 3500 MHz

      46

      %

      ACPR @ 3500 MHz-34.2dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG1CHD8A-F2EF*

      Brief description for the product

      DXG1CHD8A-F2EF*

      DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

      Operating Characteristics

      ParameterValueUnit
      Frequency (Min.)3300MHz
      Frequency (Max.)3800MHz
      Supply Voltage (Typ.)52V
      Psat (Typ.) 56.5dBm
      Power Gain @ 3400 MHz14.0dB
      Efficiency @ 3400 MHz42.0%
      ACPR @ 3400 MHz-28.0dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2CH50A-200EF*

      Brief description for the product

      DXG2CH50A-200EF*

      DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      4800

      MHz

      Frequency (Max.)

      5000

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      53.2

      dBm

      Power Gain @ 4900 MHz

      14.2

      dB

      Efficiency @ 4900 MHz

      44.5

      %

      ACPR @ 4900 MHz-28.5/-47dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG1PH22A-120N*

      Brief description for the product

      DXG1PH22A-120N*

      DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

      Operating Characteristics

      ParameterValueUnit
      Frequency (Min.)1805MHz
      Frequency (Max.)2170MHz
      Supply Voltage (Typ.)48V
      Psat (Typ.) 50.8dBm
      Power Gain @ 2110 MHz14.6dB
      Efficiency @ 2110 MHz55.5%
      ACPR @ 2100 MHz-35.0dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2PH27A-100N*

      Brief description for the product

      DXG2PH27A-100N*

      DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz. 


      Operating Characteristics

      ParameterValueUnit
      Frequency (Min.)2496MHz
      Frequency (Max.)2690MHz
      Supply Voltage (Typ.)48V
      Psat (Typ.) 49.9dBm
      Power Gain @ 2600 MHz15.9dB
      Efficiency @ 2600 MHz56.5%
      ACPR @ 2600 MHz-32.5dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2PH36A-70N*

      Brief description for the product

      DXG2PH36A-70N*

      DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      3300

      MHz

      Frequency (Max.)

      3800

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      48.1

      dBm

      Power Gain @ 3500 MHz

      15.4

      dB

      Efficiency @ 3500 MHz

      53.5

      %

      ACPR @ 3500 MHz-31.0dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


      DXG2PH36A-100N*

      Brief description for the product

      DXG2PH36A-100N*

      DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      3300

      MHz

      Frequency (Max.)

      3800

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      50.2

      dBm

      Power Gain @ 3500 MHz

      15.8

      dB

      Efficiency @ 3500 MHz

      54.3

      %

      ACPR @ 3500 MHz

      -32.0

      dBC

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

      DXG2PH50B-20N*

      Brief description for the product

      DXG2PH50B-20N*

      DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

      Operating Characteristics

      ParameterValueUnit
      Frequency (Min.)4400MHz
      Frequency (Max.)5000MHz
      Supply Voltage (Typ.)48V
      Psat (Typ.) 42.8dBm
      Power Gain @ 4900 MHz16.0dB
      Efficiency @ 4900 MHz47.8%

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA,  Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

      DXG2PH50A-90N*

      Brief description for the product

      DXG2PH50A-90N*

      DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.


      Operating Characteristics

      ParameterValueUnit
      Frequency (Min.)4800MHz
      Frequency (Max.)5000MHz
      Supply Voltage (Typ.)48V
      Psat (Typ.) 49.6dBm
      Power Gain @ 4880 MHz12.5dB
      Efficiency @ 4880 MHz48.3%
      ACPR @ 4880 MHz-32.0dBc

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

      DXG2PH60B-14N*

      Brief description for the product

      DXG2PH60B-14N*

      DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      0

      MHz

      Frequency (Max.)

      6000

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      42.2

      dBm

      Power Gain @ 3500 MHz

      15.4

      dB

      Efficiency @ 3500 MHz

      41.8

      %

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

      DXG1PH60P-40N

      Brief description for the product

      DXG1PH60P-40N

      DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

      applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      DC

      MHz

      Frequency (Max.)

      6000

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      46.3

      dBm

      Power Gain @ 1842 MHz

      21.3

      dB

      Efficiency @ 1842 MHz

      31.7

      %

      ACPR @ 1842 MHz

      -41.0

      dBc


      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

       


      DXG1PH60P-60N*

      Brief description for the product

      DXG1PH60P-60N*

      DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

      applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


      Operating Characteristics

      Parameter

      Value

      Unit

      Frequency (Min.)

      DC

      MHz

      Frequency (Max.)

      6000

      MHz

      Supply Voltage (Typ.)

      48

      V

      Psat (Typ.)

      47.8

      dBm

      Power Gain @  1842   MHz

      19.5

      dB

      Efficiency  @    1842   MHz

      55.0

      %

      ACPR @   1842   MHz

      -30.0

      dBC

      Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


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